2SC3405 2002-08-13 1 toshiba transistor silicon npn triple diffused type 2SC3405 switching regulator and high voltage switching applications high speed dc-dc converter applications excellent switching times: t r = 1.0 s (max) t f = 1.0 s (max), (i c = 0.3 a) high collector breakdown voltage: v ceo = 800 v maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 8 v dc i c 0.8 collector current pulse i cp 1.5 a base current i b 0.2 a ta = 25c 1.0 collector power dissipation tc = 25c p c 20 w junction temperature t j 150 c storage temperature range t stg ? 55 to 10 c industrial applications unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.)
2SC3405 2002-08-13 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 800 v, i e = 0 D D 100 a emitter cut-off current i ebo v eb = 8 v, i c = 0 D D 1 ma collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 900 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 800 D D v v ce = 5 v, i c = 1 ma 6 D D dc current gain h fe v ce = 5 v, i c = 0.3 a 10 D D collector-emitter saturation voltage v ce (sat) i c = 0.3 a, i b = 0.06 a D D 0.5 v base-emitter saturation voltage v be (sat) i c = 0.3 a, i b = 0.06 a D D 1.2 v rise time t r D D 1.0 storage time t stg D D 4.0 switching time fall time t f i b1 = ? i b2 = 0.06 a, duty cycle 1% D D 1.0 s marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture 20 s input i b1 i b2 output v cc 400 v i b1 1.3 k ? i b2 c3405 product no. lot no.
2SC3405 2002-08-13 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) switching characteristics switching time (s) common emitter tc = 25c 0 0 1.0 0.2 i b = 5 ma 0.4 0.6 0.8 2 4 6 8 10 12 14 0 10 20 30 40 60 80 100 1.2 0 0 common emitter v ce = 5 v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 tc = 100c 25 ? 55 30 0.1 0 resistance load (r) i c /i b1 = 10 2i b1 = ? i b2 pulse width = 20s duty cycle 1 0.2 0.4 0.6 0.8 1.0 1.2 3 5 10 25 tc = 100c 0.3 0.5 1 100 25 100 25 t stg t f t r common emitter v ce = 5 v 2 0.001 30 50 100 300 0.003 0.01 0.03 0.1 0.3 tc = 100c ? 55 25 5 10 1 common emitter i c /i b = 5 0.02 0.001 0.3 0.5 1 3 0.003 0.01 0.03 0.1 0.3 tc = 100c 25 55 0.05 0.1 1 common emitter i c /i b = 5 0.2 0.003 1 3 5 10 0.01 0.03 0.1 0.3 1 tc = ? 55c 25 0.5 0.001 100 0.3
2SC3405 2002-08-13 4 safe operating area collector current i c (a) pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) collector-emitter voltage v ce (v) curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) infinite heat sink (2) no heat sink 0.1 0.001 100 0.01 0.1 1 10 100 1000 10 1 (1) (2) *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 3 0.005 3 1 0.3 0.1 0.05 0.03 10 30 300 100 1000 0.5 i c max (continuous) i c max (pulsed)* v ceo max 1 ms* 10 s* 100 s* dc operation tc = 25c 100 ms* 10 ms* 3 ms* 0.01
2SC3405 2002-08-13 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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